| PART |
Description |
Maker |
| AM29LV128LH103EI AM29LV128LH103FI AM29LV128LH103PC |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 110ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 120ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 90ns
|
Advanced Micro Devices
|
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| BU2385KN |
Multimedia LSIs > Multimedia video > Clock generator for DSC
|
ROHM
|
| BA7062F |
Multimedia LSIs > Multimedia video > SYNC separation IC
|
ROHM
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| AM27X010 AM27X010-120JC AM27X010-120JI AM27X010-12 |
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 250 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 55 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 120 ns, PDIP32
CABLE TIE BARB TY 120LB 18.1,1
|
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
ADVANCED MICRO DEVICES INC
|
| HT82K68E-L11 |
Multimedia Keyboard Encoder 8-Bit MCU
|
Holtek Semiconductor Inc
|
| SAF-XC164CS-16F20FAD SAF-XC164CS-16F40FAD SAF-XC16 |
16-Bit Microcontrollers - 128 K Flash, 6 K RAM, -40..85C, 20MHz
16-Bit Microcontrollers - 128 K Flash, 6 K RAM, -40..85C, 40MHz
16-Bit Microcontrollers - 128 K ROM, 6 K RAM, -40..85C
16-Bit Microcontrollers - 64 K Flash, 6 K RAM, -40..85C, 20MHz
16-Bit Microcontrollers - 64 K Flash, 6 K RAM, -40..85C, 40MHz
16-Bit Microcontrollers - 128 K Flash, 6 K RAM, -40..125C, 20MHz
16-Bit Microcontrollers - 128 K Flash, 6 K RAM, -40..125C, 40MHz
16-Bit Microcontrollers - 128 K ROM, 6 K RAM, -40..125C
16-Bit Microcontrollers - 64 K Flash, 6 K RAM, -40..125C, 20MHz
16-Bit Microcontrollers - 64 K Flash, 6 K RAM, -40..125C, 40MHz
New enhanced 16 Bit C166S V2 Architecture
|
Infineon
|
| AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位）的CMOS 5.0伏只，统一部门快闪记忆
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位）的CMOS 5.0伏只，统一部门快闪记忆
|
Advanced Micro Devices, Inc.
|
|
